High efficiency and low threshold current strained V-groove quantum-wire lasers

Multi-quantum-wire strained lasers are reported in the Ga, -,In.tAs/Ga, -.,Al,As semiconductor material system with a minimum threshold current of IX8 ,xA and maximum powers of =50 PW in continuous multimode operation at wavelengths of -=4RO nm and differential output of =0.5 ,LLW/ ,uA. The structures, fabricated by molecular-beam epitaxy, are self-aligned, self-isolated, and minimize electrical and optical losses. Internal quantum efficiencies are -83% and internal losses are 4.2 cm I. Characteristic temperatures of --2X K, and an increase in threshold current and lasing wavelength under extermally applied stress changing from compressive to tensile conditions, show that the major determinants of lasing threshold are density of states and optical losses.